1 April 2010 Maskless lithography and nanopatterning with electron and ion multibeam projection
Author Affiliations +
Multi-beam writing becomes mandatory in order to stay within reasonable realization times for the fabrication of leading-edge complex masks and templates. IMS Nanofabrication has developed multi-beam projection techniques implementing a programmable aperture plate system (APS) and charged-particle projection optics with 200x reduction. Proof-of-concept of multi-beam writing was demonstrated in 2009 with 10 keV ion multi-beams and 50 keV electron multi-beams using 43-thousand and 2.5-thousand, respectively, programmable 12.5nm sized beams. In Q4 2009 the development of a 50 keV electron multi-beam Mask Exposure Tool (eMET) was started with the aim to realize 256-thousand programmable 20 nm and 10 nm sized beams. The eMET column realization will provide important synergies for the development of projection mask-less lithography (PML2) for direct write on wafers. In order to enhance throughput a Multi-Axis-PML2 scheme is put forward with potential throughput of 5 WPH for the 16 nm hp technology node and below. Clustering such maskless tools a throughput of 50-100 WPH within a scanner floor space is envisioned. Ion multi-beam techniques may be applied for 2.5D / 3D template fabrication and resistless nanopatterning.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elmar Platzgummer, "Maskless lithography and nanopatterning with electron and ion multibeam projection", Proc. SPIE 7637, Alternative Lithographic Technologies II, 763703 (1 April 2010); doi: 10.1117/12.852226; https://doi.org/10.1117/12.852226

Back to Top