2 April 2010 Planarizing material for reverse-tone step and flash imprint lithography
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Reverse-tone Step and Flash Imprint Lithography (S-FIL/R) requires materials that can be spin coated onto patterned substrates with significant topography and that are highly-planarizing. Ideally, these planarizing materials must contain silicon for etch selectivity, be UV or thermally curable, have low viscosity, and low volatility. One such novel material in particular, a branched and functionalized siloxane (Si-12), is able to adequately satisfy the above requirements. This paper describes a study of the properties of epoxy functionalized Si-12 (epoxy-Si-12) as a planarizing layer. An efficient synthetic route to epoxy-Si-12 was successfully developed, which is suitable and scalable for an industrial process. Epoxy-Si-12 has a high silicon content (30.0 %), low viscosity (29 cP @ 25 °C), and low vapor pressure (0.65 Torr @ 25 °C). A planarizing study was carried out using epoxy-Si-12 on trench patterned test substrates. The material showed excellent planarizing properties and met the calculated critical degree of planarization (critical DOP), which is a requirement for a successful etch process. An S-FIL/R process using epoxy-Si-12 was demonstrated using, an ImprioR 100 (Molecular Imprints Inc., USA) imprint tool. The results indicate that epoxy-Si-12 works very well as a planarizing layer for S-FIL/R.
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Tsuyoshi Ogawa, Tsuyoshi Ogawa, Satoshi Takei, Satoshi Takei, B. Michael Jacobsson, B. Michael Jacobsson, Ryan Deschner, Ryan Deschner, William Bell, William Bell, Michael W. Lin, Michael W. Lin, Yuji Hagiwara, Yuji Hagiwara, Makoto Hanabata, Makoto Hanabata, C. Grant Willson, C. Grant Willson, "Planarizing material for reverse-tone step and flash imprint lithography", Proc. SPIE 7637, Alternative Lithographic Technologies II, 763708 (2 April 2010); doi: 10.1117/12.846430; https://doi.org/10.1117/12.846430

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