1 April 2010 CMOS process compatible directed block copolymer self-assembly for 20nm contact holes and beyond
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Abstract
Single FETs and CMOS inverters with 20 nm contact holes patterned using self-assembled diblock copolymer are demonstrated in this work. Alignment of the self-assembled contact holes to the MOSFET source and drain is achieved with a unique guiding layer and the self-assembly process is integrated with an existing CMOS process flow using conventional tools on a full 4" wafer level. Potential application for block copolymer patterning on SRAM circuit level is also discussed.
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Li-Wen Chang, Li-Wen Chang, Xin-Yu Bao, Xin-Yu Bao, H.-S. Philip Wong, H.-S. Philip Wong, } "CMOS process compatible directed block copolymer self-assembly for 20nm contact holes and beyond", Proc. SPIE 7637, Alternative Lithographic Technologies II, 76370I (1 April 2010); doi: 10.1117/12.848430; https://doi.org/10.1117/12.848430
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