2 April 2010 A novel lithography process for 3D (three-dimensional) interconnect using an optical direct-writing exposure system
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Abstract
A novel lithography process for 3D (Three-dimensional) interconnect was developed using an optical direct-writing exposure tool. A reflective IR (Infra-red) alignment system allows a direct detection of alignment marks both on front-side and back-side of wafer, and consequently allows feasible micro-fabrication for 3D interconnect using the reversed wafer. A combination of the optical direct-writing exposure tool of Dainippon Screen MFG. Co., Ltd. with the reflective IR alignment system and a high aspect chemically amplified resist of Tokyo Ohka Kogyo Co., Ltd. provides the lithography process exclusively for 12-inch wafer level 3D interconnect.
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T. Azuma, T. Azuma, M. Sekiguchi, M. Sekiguchi, M. Matsuo, M. Matsuo, A. Kawasaki, A. Kawasaki, K. Hagiwara, K. Hagiwara, H. Matsui, H. Matsui, N. Kawamura, N. Kawamura, K. Kishimoto, K. Kishimoto, A. Nakamura, A. Nakamura, Y. Washio, Y. Washio, "A novel lithography process for 3D (three-dimensional) interconnect using an optical direct-writing exposure system", Proc. SPIE 7637, Alternative Lithographic Technologies II, 76371O (2 April 2010); doi: 10.1117/12.846013; https://doi.org/10.1117/12.846013
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