A novel lithography process for 3D (three-dimensional) interconnect using an optical direct-writing exposure system

T. Azuma; M. Sekiguchi; M. Matsuo; A. Kawasaki; K. Hagiwara; H. Matsui; N. Kawamura; K. Kishimoto; A. Nakamura; Y. Washio

doi:10.1117/12.846013

2 April 2010 A novel lithography process for 3D (three-dimensional) interconnect using an optical direct-writing exposure system

T. Azuma, M. Sekiguchi, M. Matsuo, A. Kawasaki, K. Hagiwara, H. Matsui, N. Kawamura, K. Kishimoto, A. Nakamura, Y. Washio

Author Affiliations +

Proceedings Volume 7637, Alternative Lithographic Technologies II; 76371O (2010) https://doi.org/10.1117/12.846013
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

A novel lithography process for 3D (Three-dimensional) interconnect was developed using an optical direct-writing exposure tool. A reflective IR (Infra-red) alignment system allows a direct detection of alignment marks both on front-side and back-side of wafer, and consequently allows feasible micro-fabrication for 3D interconnect using the reversed wafer. A combination of the optical direct-writing exposure tool of Dainippon Screen MFG. Co., Ltd. with the reflective IR alignment system and a high aspect chemically amplified resist of Tokyo Ohka Kogyo Co., Ltd. provides the lithography process exclusively for 12-inch wafer level 3D interconnect.

Citation Download Citation

T. Azuma, M. Sekiguchi, M. Matsuo, A. Kawasaki, K. Hagiwara, H. Matsui, N. Kawamura, K. Kishimoto, A. Nakamura, and Y. Washio "A novel lithography process for 3D (three-dimensional) interconnect using an optical direct-writing exposure system", Proc. SPIE 7637, Alternative Lithographic Technologies II, 76371O (2 April 2010); https://doi.org/10.1117/12.846013

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