CP based EBDW throughput enhancement for 22nm high volume manufacturing

Takashi Maruyama; Y. Machida; S. Sugatani

doi:10.1117/12.846492

2 April 2010 CP based EBDW throughput enhancement for 22nm high volume manufacturing

Takashi Maruyama, Y. Machida, S. Sugatani

Proceedings Volume 7637, Alternative Lithographic Technologies II; 76371S (2010) https://doi.org/10.1117/12.846492
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

The CP (character projection) based multi-beam EBDW system MCC (Multi Column cell) seems to be most practical from the view point of the extension of single beam CP based methodology which we have already introduced to device production. But drastic enhancement approach is indispensable to attain higher throughput of more than 100 WPH for 22nm node and beyond. The three key factors are the multi-beam number, the cluster chamber number and the CP shot count reduction rate. In this report, we show the estimation results of beam number, cluster chamber number, CP reduction rate and current density to attain the throughput of 100 WPH with MCC.

Citation Download Citation

Takashi Maruyama, Y. Machida, and S. Sugatani "CP based EBDW throughput enhancement for 22nm high volume manufacturing", Proc. SPIE 7637, Alternative Lithographic Technologies II, 76371S (2 April 2010); https://doi.org/10.1117/12.846492

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