Paper
2 April 2010 CP based EBDW throughput enhancement for 22nm high volume manufacturing
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Abstract
The CP (character projection) based multi-beam EBDW system MCC (Multi Column cell) seems to be most practical from the view point of the extension of single beam CP based methodology which we have already introduced to device production. But drastic enhancement approach is indispensable to attain higher throughput of more than 100 WPH for 22nm node and beyond. The three key factors are the multi-beam number, the cluster chamber number and the CP shot count reduction rate. In this report, we show the estimation results of beam number, cluster chamber number, CP reduction rate and current density to attain the throughput of 100 WPH with MCC.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Maruyama, Y. Machida, and S. Sugatani "CP based EBDW throughput enhancement for 22nm high volume manufacturing", Proc. SPIE 7637, Alternative Lithographic Technologies II, 76371S (2 April 2010); https://doi.org/10.1117/12.846492
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Cited by 6 scholarly publications.
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KEYWORDS
Electron beam direct write lithography

High volume manufacturing

Extreme ultraviolet

Logic

Semiconducting wafers

Vestigial sideband modulation

Analog electronics

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