You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
2 April 2010Model-based proximity effect correction for electron-beam
direct-write lithography
A model-based proximity effect correction methodology is proposed and tested for electron-beam-direct-write
lithography. It iteratively modulates layout geometry by feedback compensation until the correction error converges. The
energy intensity distribution is efficiently calculated by fast convolving the modulated layout with a point-spread
function which models electron beam shape and proximity effects primarily due to electron scattering in resist. The
effectiveness of this methodology is measured by iteration numbers required for meeting the patterning fidelity
specifications. It is examined versus process parameters including acceleration voltage and resist thickness with several
regular mask geometries and practical design layouts.
The alert did not successfully save. Please try again later.
Chun-Hung Liu, Pei-Lin Tien, Philip C. W. Ng, Yu-Tian Shen, Kuen-Yu Tsai, "Model-based proximity effect correction for electron-beam direct-write lithography," Proc. SPIE 7637, Alternative Lithographic Technologies II, 76371V (2 April 2010); https://doi.org/10.1117/12.846706