2 April 2010 Design and fabrication of Si-based photonic crystal stamps with electron beam lithography (EBL)
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Abstract
The ability of fabrication structure in nano-scale with high precise has established technologies like nanoimprinting via hard stamps, where the stamps are usually produced via Electron Beam Lithography (EBL) for applications in the microelectronic industry. On the other hand, nanopatterning with self ordered structures or via holographic patterns provide the basis for large area imprints. In this work we report on a technology for enabling the mass replication of custom-designed and e-beam lithographically prepared structures for pattern transfer into UV curable pre-polymers. The new nano-fabrication technology is based on the concept of Disposal Master Technology (DMT) capable of patterning areas up to 1 x 1 m2 and is suitable for mass volume manufacturing of large area arrays of sub-wavelength photonic elements. As an example to show the potential of the application of the new nanoimprint technologies, we choose the fabrication of a photonic crystal (PhC) structure with integrated light coupling devices for low loss interconnection between PhC light wave circuits and optical fiber systems. In experiment we use 260nm of positive resist 950K PMMA for EBL exposure. Resist thickness, exposure dose, development time and parameter for etching have been optimized and a photonic crystal of air-holes in silicon was fabricated, then use this sample as master stamp to fabricate imprinted photonic crystal on UV curable resist.
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Reihaneh Jannesary, Iris Bergmair, Saeid Zamiri, Kurt Hingerl, "Design and fabrication of Si-based photonic crystal stamps with electron beam lithography (EBL)", Proc. SPIE 7637, Alternative Lithographic Technologies II, 763720 (2 April 2010); doi: 10.1117/12.848266; https://doi.org/10.1117/12.848266
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