2 April 2010 A first order analysis of scatterometry sensitivity for NIL process
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Abstract
In this paper the first order analysis of the scatterometry sensitivity up to 45nm HP resin pattern and beyond by using RCWA (Rigorous Coupled Wave-analysis) simulation is described. A criterion, defined as the sum of the absolute difference of the reflectivity values between the nominal and varied conditions thorough the spectrum, is introduced. The criterion of this analysis is a kind of quantification of the sensitivity comparing with 65 nm HP resist pattern of ArF immersion process. Furthermore, the simulated result in this analysis can be used to discuss the extendibility of scatterometry.
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Takahiro Miyakawa, Koichi Sentoku, Kazuhiro Sato, Hideki Ina, "A first order analysis of scatterometry sensitivity for NIL process", Proc. SPIE 7637, Alternative Lithographic Technologies II, 763721 (2 April 2010); doi: 10.1117/12.855872; https://doi.org/10.1117/12.855872
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