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1 April 2010 New measurement technology for CD and pattern profile variation using optical Fourier space
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Abstract
As well as measuring CD, monitoring pattern profile is becoming important for semiconductor metrology. Illuminating the wafer and detecting the reflective light, reflective light intensity in the Fourier space includes the information of CD and pattern profile variation by form birefringence effect. CD change and profile variation could be detected separately for the actual wafer. Mathematical simulation is presented the background of our unique approach. The detail results of CD and pattern profile monitor is shown in this paper.
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Fuminori Hayano, Akitoshi Kawai, Toshio Uchikawa, Kazumasa Endo, Kiminori Yoshino, Yuuichiro Yamazaki, Kuniharu Nagashima, and Kenji Tsuchiya "New measurement technology for CD and pattern profile variation using optical Fourier space", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76380E (1 April 2010); https://doi.org/10.1117/12.846336
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