1 April 2010 After development inspection defectivity studies of an advanced memory device
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Abstract
In this study, a 3x-nm after development inspection (ADI) wafer with focus exposure matrix (FEM) was inspected with both an advanced optical system and an advanced electron beam inspection (EBI) system, and the inspection results were carefully examined. We found that EBI can capture much more defects than optical system and it also can provide more information about within reticle shot defect distribution. It has high capture rate of certain critical defects that are insensitive to optical system, such as nano-bridges. We also studied the critical dimension (CD) variations caused by the optical inspection and EBI.
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Hyung-Seop Kim, Byoung-Ho Lee, Eric Ma, Fei Wang, Yan Zhao, Kenichi Kanai, Hong Xiao, Jack Jau, "After development inspection defectivity studies of an advanced memory device", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76380L (1 April 2010); doi: 10.1117/12.848066; https://doi.org/10.1117/12.848066
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