1 April 2010 LER detection using dark field spectroscopic reflectometry
Author Affiliations +
Abstract
Line edge roughness (LER) is an increasingly important issue as lithography scales down. Currently LER is usually measured using scanning electron microscopy (SEM) tools; however, using optical techniques to measure LER may have potential benefit due to less resist damage and higher throughput. In this paper, we explore the detection and potential measurement of LER using dark field spectroscopic reflectometry. We provide a proof of feasibility by showing LER spectra collected on several different applications, which behave consistently with scattering from small particles (Rayleigh) and decrease sharply with wavelength. Additionally, the dependence of the spectra on film thickness bears resemblance to thin film measurements. Finally, we also provide preliminary simulation results showing similar spectral characteristics to the measured spectra.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boaz Brill, Boaz Brill, Shahar Gov, Shahar Gov, Dani Hak, Dani Hak, Valery Sorin, Valery Sorin, Tal Marcu, Tal Marcu, Benjamin Bunday, Benjamin Bunday, } "LER detection using dark field spectroscopic reflectometry", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76380P (1 April 2010); doi: 10.1117/12.846449; https://doi.org/10.1117/12.846449
PROCEEDINGS
10 PAGES


SHARE
Back to Top