1 April 2010 Characterization of cross sectional profile of nanostructure line grating using small angle x-ray scattering
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Abstract
Grazing incidence small-angle x-ray scattering (GISAXS) is proposed as one of the candidates for characterizing cross section of nanostructure line grating pattern. GISAXS is expected as useful nondestructive tool for characterizing cross section. We developed GISAXS and evaluated the capability using the 4X nm resist line patterns and the 3X nm silicon gate line patterns. The GISAXS results are compared with TEM images to evaluate the reconstruction ability in cross section contour profile. The correlation is investigated between GISAXS and the reference tools such as CD-SEM and TEM in the values of CD, height and bottom corner radius. The static repeatability is also evaluated by performing measurement ten times. We report the results of GISAXS capability as cross sectional metrology tool in actual device of 4X and 3X generation.
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Y. Ishibashi, T. Koike, Y. Yamazaki, Y. Ito, Y. Okazaki, K. Omote, "Characterization of cross sectional profile of nanostructure line grating using small angle x-ray scattering", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763812 (1 April 2010); doi: 10.1117/12.848193; https://doi.org/10.1117/12.848193
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