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1 April 2010 Sub-50-nm measurements using a 193-nm angle-resolved scatterfield microscope
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Abstract
Resist-on-silicon sub-50-nm critical dimension targets have been investigated using a 193 nm angle-resolved scatterfield microscope (ARSM). The illumination path of this microscope allows customization of the conjugate back focal plane (CBFP) while separate collection paths permit both high-magnification and Fourier-plane imaging. Aspects of the calibration of this microscope are presented. Full-field, Fourier-plane images are collected as individual targets are illuminated using a field-of-view smaller than the target size; the range of incident polar angles corresponds to the numerical aperture (NA) of the objective, NA = 0.08 to 0.74. Next, angle-resolved scatterfield high-magnification imaging of these same targets are acquired in a conical mounting configuration by scanning the 12 mm diameter CBFP with a 1 mm diameter aperture. The results of these measurements and the prospects for quantitative, simultaneous measurement of multiple targets are discussed.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Quintanilha, Y. J. Sohn, B. M. Barnes, and R. Silver "Sub-50-nm measurements using a 193-nm angle-resolved scatterfield microscope", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76381E (1 April 2010); https://doi.org/10.1117/12.846383
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