Paper
1 April 2010 Method for wafer edge profile extraction using optical images obtained in edge defect inspection process
Hiroaki Okamoto, Naoshi Sakaguchi, Fuminori Hayano
Author Affiliations +
Abstract
It is becoming increasingly important to monitor wafer edge profiles in the immersion lithography era. A Nikon edge defect inspection tool acquires the circumferential optical images of the wafer edge during its inspection process. Nikon's unique illumination system and optics make it possible to then convert the brightness data of the captured images to quantifiable edge profile information. During this process the wafer's outer shape is also calculated. Test results show that even newly shipped bare wafers may not have a constant shape over 360 degree. In some cases repeated deformations with 90 degree pitch are observed.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroaki Okamoto, Naoshi Sakaguchi, and Fuminori Hayano "Method for wafer edge profile extraction using optical images obtained in edge defect inspection process", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763826 (1 April 2010); https://doi.org/10.1117/12.848315
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CITATIONS
Cited by 2 patents.
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KEYWORDS
Semiconducting wafers

Wafer-level optics

Image processing

Inspection

Cameras

Confocal microscopy

Defect inspection

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