1 April 2010 Monitoring and control of photoresist properties and CD during photoresist processing
Author Affiliations +
Current approaches to control critical dimensions (CD) uniformity during lithography is primarily based on run-to- run (R2R) methods where the CD is measured at the end of the process and correction is done on the next wafer (or batch of wafers) by adjusting the parameter set-points. In this work, we proposed a method to monitor the various photoresist parameters (e.g. photoresist thickness, photoactive compound) and CD in-situ and in real-time. Through modeling and real-time identification, we develop new in-situ measurement techniques for the various parameters of interest in the lithography sequence using existing available data in the manufacturing process.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geng Yang, Yit-Sung Ngo, Andi S. Putra, Kar-Tien Ang, Arthur Tay, Zhong-Ping Fang, "Monitoring and control of photoresist properties and CD during photoresist processing", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763828 (1 April 2010); doi: 10.1117/12.846560; https://doi.org/10.1117/12.846560

Back to Top