2 April 2010 Monitoring and control of photoresist properties and CD during photoresist processing
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Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 763828 (2010); doi: 10.1117/12.846560
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
Current approaches to control critical dimensions (CD) uniformity during lithography is primarily based on run-to- run (R2R) methods where the CD is measured at the end of the process and correction is done on the next wafer (or batch of wafers) by adjusting the parameter set-points. In this work, we proposed a method to monitor the various photoresist parameters (e.g. photoresist thickness, photoactive compound) and CD in-situ and in real-time. Through modeling and real-time identification, we develop new in-situ measurement techniques for the various parameters of interest in the lithography sequence using existing available data in the manufacturing process.
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Geng Yang, Yit-Sung Ngo, Andi S. Putra, Kar-Tien Ang, Arthur Tay, Zhong-Ping Fang, "Monitoring and control of photoresist properties and CD during photoresist processing", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763828 (2 April 2010); doi: 10.1117/12.846560; https://doi.org/10.1117/12.846560
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KEYWORDS
Semiconducting wafers

Photoresist materials

Lithography

Critical dimension metrology

Spectroscopy

Manufacturing

Photoresist processing

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