2 April 2010 Advanced diffraction-based overlay for double patterning
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Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 76382C (2010); doi: 10.1117/12.848516
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
Diffraction based overlay (DBO) technologies have been developed to address the tighter overlay control challenges as the dimensions of integrated circuit continue to shrink. Several studies published recently have demonstrated that the performance of DBO technologies has the potential to meet the overlay metrology budget for 22nm technology node. However, several hurdles must be cleared before DBO can be used in production. One of the major hurdles is that most DBO technologies require specially designed targets that consist of multiple measurement pads, which consume too much space and increase measurement time. A more advanced spectroscopic ellipsometry (SE) technology-Mueller Matrix SE (MM-SE) is developed to address the challenge. We use a double patterning sample to demonstrate the potential of MM-SE as a DBO candidate. Sample matrix (the matrix that describes the effects of the sample on the incident optical beam) obtained from MM-SE contains up to 16 elements. We show that the Mueller elements from the off-diagonal 2x2 blocks respond to overlay linearly and are zero when overlay errors are absent. This superior property enables empirical DBO (eDBO) using two pads per direction. Furthermore, the rich information in Mueller matrix and its direct response to overlay make it feasible to extract overlay errors from only one pad per direction using modeling approach (mDBO). We here present the Mueller overlay results using both eDBO and mDBO and compare the results with image-based overlay (IBO) and CD-SEM results. We also report the tool induced shifts (TIS) and dynamic repeatability.
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Jie Li, Yongdong Liu, Prasad Dasari, Jiangtao Hu, Nigel Smith, Oleg Kritsun, Catherine Volkman, "Advanced diffraction-based overlay for double patterning", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382C (2 April 2010); doi: 10.1117/12.848516; https://doi.org/10.1117/12.848516
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KEYWORDS
Overlay metrology

Double patterning technology

Semiconducting wafers

Spectroscopic ellipsometry

Metrology

Optical components

Time metrology

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