Application of model-based library approach to photoresist pattern shape measurement in advanced lithography

Naoki Yasui; Miki Isawa; Toru Ishimoto; Kohei Sekiguchi; Maki Tanaka; Mayuka Osaki; Chie Shishido; Norio Hasegawa; Shaunee Cheng

doi:10.1117/12.846504

1 April 2010 Application of model-based library approach to photoresist pattern shape measurement in advanced lithography

Naoki Yasui, Miki Isawa, Toru Ishimoto, Kohei Sekiguchi, Maki Tanaka, Mayuka Osaki, Chie Shishido, Norio Hasegawa, Shaunee Cheng

Author Affiliations +

Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 76382O (2010) https://doi.org/10.1117/12.846504
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

The model-based library (MBL) matching technique was applied to measurements of photoresist patterns exposed with a leading-edge ArF immersion lithography tool. This technique estimates the dimensions and shape of a target pattern by comparing a measured SEM image profile to a library of simulated line scans. In this study, a double trapezoid model was introduced into MBL library, which was suitable for precise approximation of a photoresist profile. To evaluate variously-shaped patterns, focus-exposure matrix wafers were exposed under three-illuminations. The geometric parameters such as bottom critical dimension (CD), top and bottom sidewall angles were estimated by MBL matching. Lithography simulation results were employed as a reference data in this evaluation. As a result, the trends of the estimated sidewall angles are consistent with the litho-simulation results. MBL bottom CD and threshold method 50% CD are also in a very good agreement. MBL detected wide-SWA variation in a focus series which were determined as in a process window by CD values. The trend of SWA variation, which is potentiality to undergo CD shift at later-etch step, agreed with litho-simulation results. These results suggest that MBL approach can achieve the efficient measurements for process development and control in advanced lithography.

Citation Download Citation

Naoki Yasui, Miki Isawa, Toru Ishimoto, Kohei Sekiguchi, Maki Tanaka, Mayuka Osaki, Chie Shishido, Norio Hasegawa, and Shaunee Cheng "Application of model-based library approach to photoresist pattern shape measurement in advanced lithography", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382O (1 April 2010); https://doi.org/10.1117/12.846504

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available