Analysis of trade-off relationships in resist patterns delineated using SFET of Selete

Takahiro Kozawa; Hiroaki Oizumi; Toshiro Itani; Seiichi Tagawa

doi:10.1117/12.846500

25 March 2010 Analysis of trade-off relationships in resist patterns delineated using SFET of Selete

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, Seiichi Tagawa

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76390B (2010) https://doi.org/10.1117/12.846500
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

We investigated the relationship between line edge roughness (LER) and the chemical gradient using the fourth Selete Standard Resist (SSR4). Two-dimensional (half-pitch and exposure dose) matrices of resist line width and LER were analyzed on the basis of the sensitization mechanisms of chemically amplified resists for extreme ultraviolet (EUV) lithography. The latent images of resist patterns were successfully reproduced by assuming that LER is inversely proportional to the chemical gradient. The product of LER and normalized chemical gradient was approximately 0.2 for SSR4.

Citation Download Citation

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, and Seiichi Tagawa "Analysis of trade-off relationships in resist patterns delineated using SFET of Selete", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390B (25 March 2010); https://doi.org/10.1117/12.846500

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