A silicon-containing resist for immersion lithography

Ratnam Sooriyakumaran; Wu-Song Huang; Sally Swanson; Hoa Truong; Phillip Brock; Alexander Friz; Kuang-Jung Chen; Robert Allen

doi:10.1117/12.846280

25 March 2010 A silicon-containing resist for immersion lithography

Ratnam Sooriyakumaran, Wu-Song Huang, Sally Swanson, Hoa Truong, Phillip Brock, Alexander Friz, Kuang-Jung Chen, Robert Allen

Author Affiliations +

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76390F (2010) https://doi.org/10.1117/12.846280
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

We have developed a new silicon-containing resist for 193-nm immersion lithography. This resist is compatible with topcoats used in the industry today for immersion lithography. Most of the current topcoats contain 4-methyl-2- pentanol as a solvent. Our evaluations indicated that the previously developed silicon-containing resists are not compatible with the current topcoats because of their solubility in 4-methyl-2-pentanol. In the new resist polymers, we have incorporated high percentage (> 60 mol%) of lactone monomers to prevent them from dissolving in this solvent. In order to increase the lactone content in a silicon polymer, we have incorporated lactone containing acidlabile functionalities in addition to widely used acid-inert lactone monomers. Utilizing these polymers, we have demonstrated a functional silicon-containing photoresist for immersion lithography.

Citation Download Citation

Ratnam Sooriyakumaran, Wu-Song Huang, Sally Swanson, Hoa Truong, Phillip Brock, Alexander Friz, Kuang-Jung Chen, and Robert Allen "A silicon-containing resist for immersion lithography", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390F (25 March 2010); https://doi.org/10.1117/12.846280

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