Design and development of production-worthy developable BARCs(DBARCs) for implant lithography

James Cameron; John Amara; Jin Wuk Sung; David Valeri; Adam Ware; Kevin O'Shea; Yoshihiro Yamamoto; Hiroaki Kitaguchi; Libor Vyklicky; Irene Popova; Pushkara R. Varanasi

doi:10.1117/12.846708

25 March 2010 Design and development of production-worthy developable BARCs(DBARCs) for implant lithography

James Cameron, John Amara, Jin Wuk Sung, David Valeri, Adam Ware, Kevin O'Shea, Yoshihiro Yamamoto, Hiroaki Kitaguchi, Libor Vyklicky, Irene Popova, Pushkara R. Varanasi

Author Affiliations +

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76390H (2010) https://doi.org/10.1117/12.846708
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

As device scaling continues according to Moore's Law, an ongoing theme in the semiconductor industry is the need for robust patterning solutions for advanced device manufacture. One particularly attractive solution for implant lithography is the use of a developable BARC (DBARC) to improve reflection control while still affording an "implant ready" substrate following development. Going forward, these two features of DBARC technology are key to successful implant patterning as the industry standard TARC process begins to falter due to poor substrate reflection control leading to profile degradation, shrinking process windows and poor CDU. In this paper, we report our progress in the design and development of production worthy DBARCs for implant lithography. In addition to outlining our general design concepts, we describe our fundamental approach to characterizing DBARCs and share key performance data showing our DBARC technology is surpassing the capability of a traditional TARC process for both KrF and ArF implant applications. Key performance metrics include CD swing, CD control over varying oxide thickness, active to field CD bias and footing over topography.

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James Cameron, John Amara, Jin Wuk Sung, David Valeri, Adam Ware, Kevin O'Shea, Yoshihiro Yamamoto, Hiroaki Kitaguchi, Libor Vyklicky, Irene Popova, and Pushkara R. Varanasi "Design and development of production-worthy developable BARCs(DBARCs) for implant lithography", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390H (25 March 2010); https://doi.org/10.1117/12.846708

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KEYWORDS

Semiconducting wafers

Oxides

Lithography

Silicon

Optical lithography

Resistance

Photoresist materials

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