25 March 2010 High resolution positive-working molecular resist attached with alicyclic acid-leaving group
Author Affiliations +
Abstract
Molecular resists are expected to offer the advantages of high resolution and low line width roughness (LWR) for the next-generation lithography. We developed a new molecular resist that showed high resolution by introducing an efficient acid-leaving group to an amorphous molecule, 1,3,5-Tris(p-(p-hydroxy- phenyl) phenyl) benzene (THTPPB). The lithographic properties such as sensitivity, developing rate, and adhesion are considered to be controlled using a suitable acid-leaving group. A molecular resist of THTPPB to which is attached with an alicyclic acid-leaving group, hyperlactyl vinyl ether group (HPVE) showed a high resolution for electron beam (EB) lithography and good etch resistance. Half-pitch 36 nm line-and-space (1:1) positive pattern was fabricated using 100 keV EB with chemically amplified molecular resist based on HPVETPPB.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arisa Yamada, Arisa Yamada, Shigeki Hattori, Shigeki Hattori, Satoshi Saito, Satoshi Saito, Koji Asakawa, Koji Asakawa, Takeshi Koshiba, Takeshi Koshiba, Tetsuro Nakasugi, Tetsuro Nakasugi, } "High resolution positive-working molecular resist attached with alicyclic acid-leaving group", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390S (25 March 2010); doi: 10.1117/12.851392; https://doi.org/10.1117/12.851392
PROCEEDINGS
11 PAGES


SHARE
Back to Top