25 March 2010 High resolution positive-working molecular resist attached with alicyclic acid-leaving group
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Abstract
Molecular resists are expected to offer the advantages of high resolution and low line width roughness (LWR) for the next-generation lithography. We developed a new molecular resist that showed high resolution by introducing an efficient acid-leaving group to an amorphous molecule, 1,3,5-Tris(p-(p-hydroxy- phenyl) phenyl) benzene (THTPPB). The lithographic properties such as sensitivity, developing rate, and adhesion are considered to be controlled using a suitable acid-leaving group. A molecular resist of THTPPB to which is attached with an alicyclic acid-leaving group, hyperlactyl vinyl ether group (HPVE) showed a high resolution for electron beam (EB) lithography and good etch resistance. Half-pitch 36 nm line-and-space (1:1) positive pattern was fabricated using 100 keV EB with chemically amplified molecular resist based on HPVETPPB.
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Arisa Yamada, Shigeki Hattori, Satoshi Saito, Koji Asakawa, Takeshi Koshiba, Tetsuro Nakasugi, "High resolution positive-working molecular resist attached with alicyclic acid-leaving group", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390S (25 March 2010); doi: 10.1117/12.851392; https://doi.org/10.1117/12.851392
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