29 March 2010 Orthogonal lithography for organic electronics
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Abstract
Organic electronics has recently gained attention as a new field promising cheaper, flexible, and large-scale devices. Although photolithography has proven to be a high-resolution and high-throughput patterning method with excellent registration capabilities, the emerging field of organic electronics has been largely unsuccessful in adapting this well-established method as a viable approach to patterning. Chemical compatibility issues between organic materials and the processing solvents and chemicals required by photolithography have been the main problem. This challenge has led us to identify a set of non-damaging processing solvents and to develop alternative imaging materials in order to extend photolithographic patterning methods to organic electronics. We have identified supercritical carbon dioxide and hydrofluoroether (HFE) solvents as chemically benign to organic electronic materials and which are also suitable as processing solvents. We refer to these solvents as orthogonal in that they do not substantially interact with traditional aqueous and organic solvents. Multi-layered devices are easily realized by exploiting this orthogonality property; subsequent layers are deposited and patterned without damaging or otherwise adversely affecting previously deposited underlying layers. We have designed and synthesized novel photoresists, which are processible in these benign solvents.
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Priscilla G. Taylor, Priscilla G. Taylor, Jin-Kyun Lee, Jin-Kyun Lee, Alexander A. Zakhidov, Alexander A. Zakhidov, Ha Soo Hwang, Ha Soo Hwang, John A. DeFranco, John A. DeFranco, Hon Hang Fong, Hon Hang Fong, Margarita Chatzichristidi, Margarita Chatzichristidi, Eisuke Murotani, Eisuke Murotani, George G. Malliaras, George G. Malliaras, Christopher K. Ober, Christopher K. Ober, } "Orthogonal lithography for organic electronics", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390Z (29 March 2010); doi: 10.1117/12.848410; https://doi.org/10.1117/12.848410
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