30 March 2010 Resist residue removal using UV ozone treatment
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Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76391A (2010); doi: 10.1117/12.849449
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
In a conventional lithography process, the resist pattern is removed by dry strip or wet chemical etch. The wet chemical etch includes sulfuric peroxide etch and solvent etch. The wet chemical etch process is always combined with the dry strip process to meet the residue process spec. However, in some applications, only the wet-etch process can be used to avoid substrate damage during the plasma step. However, organic residue can be found from particle surface scan and TGA/DSC after normal solvent strip. In this paper, we investigate polymer residue stripping using only solvent as well as solvent in combination with UV treatment. For solvents only, some solvents different from the conventional PGMEA/PGME mixture in polarity, also exhibited stripping ability but the efficiency is not as good as PGME/PGMEA mixture. When supplemented with UV treatment, the organic residue can be further decomposed and removed completely. The UV we used contains 185nm and 254nm wavelengths. Ozone is generated during UV exposure and acts as oxidant. The organic residue is thus decomposed and removed. It has been proven as an effective method to cleave the C-C bond without damaging the wafer substrate. The organic residue on the wafer surface can be easily stripped away under UV-ozone exposure. Its defect performance is also discussed in this paper.
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Shu-Fang Chen, Ching-Yu Chang, Yao-Ching Ku, "Resist residue removal using UV ozone treatment", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391A (30 March 2010); doi: 10.1117/12.849449; https://doi.org/10.1117/12.849449
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KEYWORDS
Polymers

Ultraviolet radiation

Etching

Ozone

Photoresist processing

Semiconducting wafers

Natural surfaces

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