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30 March 2010 Defect performance of a 2X node resist with a revolutionary point-of-use filter
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In today's competitive lithography market, resist manufacturers are always striving to create a product to meet lithographic challenges while maintaining a low inherent defect level. While bulk filtration used in resist manufacturing removes a majority of the inherent defectivity, point-of-use filtration is still required to ensure that defects are not passed from the bottle to the wafer. As Moore's law drives lithographers to ever decreasing dimensions, resist manufacturers must find new ways of filtering their chemistries to make sure that the smallest defects cannot create the biggest yield detractors. In addition, IDMs must use new innovations to explore point-of-use filtration techniques to protect their valuable patterns. This paper will show the conditions that can reduce defectivity in an immersion lithography scheme. More specifically, advanced point-of-use filtration techniques, including revolutionary filter membrane technology and advanced filtration settings, will be explored to understand potential 22nm node defect performance. By thinking ahead about the filtration needs of the future, resist manufacturers, IDMs, and equipment manufacturers can all work toward an understanding of the complex nature of filtration, ultimately yielding a new, low defectivity regime at the smallest pattern sizes.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Braggin, R. Ramirez, A. Wu, W. Choi, I. Funahshi, and K. Yamamoto "Defect performance of a 2X node resist with a revolutionary point-of-use filter", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391E (30 March 2010);

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