Bottom anti-reflective coatings (BARC) for LFLE double patterning process

Rikimaru Sakamoto; Takafumi Endo; Bang-Ching Ho; Shigeo Kimura; Tomohisa Ishida; Masakazu Kato; Noriaki Fujitani; Ryuji Onishi; Yoshiomi Hiroi; Daisuke Maruyama

doi:10.1117/12.846012

29 March 2010 Bottom anti-reflective coatings (BARC) for LFLE double patterning process

Rikimaru Sakamoto, Takafumi Endo, Bang-Ching Ho, Shigeo Kimura, Tomohisa Ishida, Masakazu Kato, Noriaki Fujitani, Ryuji Onishi, Yoshiomi Hiroi, Daisuke Maruyama

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Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76391R (2010) https://doi.org/10.1117/12.846012
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Double patterning process with ArF immersion lithography has been developed as one of the most promising candidate for hp32 node and beyond. However the complicated process flow and cost of ownership are the critical issue for this process. LELE (Litho-Etch-Litho-Etch) is the one of the standard process, but in order to reduce the process and cost, that LPLE(Litho-Process-Litho-Etch) process have been investigated as the alternative process. In these processes, organic Bottom-Anti-Reflective Coating (BARC) is used two times with same film in both 1st Litho and 2nd lithography process. In 2nd lithography process, resist pattern will be printed at space area where exposed and developed in 1st lithography process. Therefore, organic BARC needs to have process stability in photo and development step to keep good litho performance between 1st and 2nd lithography in LPLE process. This paper describes the process impact of 1st exposure and development for organic BARC, and the LPLE performance with optimized organic BARC will be discussed.

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Rikimaru Sakamoto, Takafumi Endo, Bang-Ching Ho, Shigeo Kimura, Tomohisa Ishida, Masakazu Kato, Noriaki Fujitani, Ryuji Onishi, Yoshiomi Hiroi, and Daisuke Maruyama "Bottom anti-reflective coatings (BARC) for LFLE double patterning process", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391R (29 March 2010); https://doi.org/10.1117/12.846012

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KEYWORDS

Lithography

Double patterning technology

Polymers

Photoresist processing

Chromophores

Photomasks

Scanning electron microscopy

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