Novel approaches to controlling photo-resist CD in double patterning processes

Kazuo Yabe; Kazuhide Hasebe; Shigeru Nakajima; Hiroki Murakami; Arisa Hara; Shoichi Yamauchi; Sakurako Natori; Kenichi Oyama; Hidetami Yaeasghi

doi:10.1117/12.846468

29 March 2010 Novel approaches to controlling photo-resist CD in double patterning processes

Kazuo Yabe, Kazuhide Hasebe, Shigeru Nakajima, Hiroki Murakami, Arisa Hara, Shoichi Yamauchi, Sakurako Natori, Kenichi Oyama, Hidetami Yaeasghi

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Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76391U (2010) https://doi.org/10.1117/12.846468
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Numerical aperture (NA) has been significantly improved to 1.35 by the introduction of water-based immersion 193-nm exposure tools, but the realistic minimum feature size is still limited to 40 nm even with the help of robust resolution enhancement techniques (RETs). Double patterning processes are techniques that can be used for fabricating etching mask patterns for 32-nm nodes and possibly for 22-nm nodes as well, but the aspect ratio of such etching mask patterns have been reduced with scaling. At the same time, dramatic improvements in the etching durability of photo resist have not been made. This paper introduces a robust pattern-slimming process that maintains pattern height.

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Kazuo Yabe, Kazuhide Hasebe, Shigeru Nakajima, Hiroki Murakami, Arisa Hara, Shoichi Yamauchi, Sakurako Natori, Kenichi Oyama, and Hidetami Yaeasghi "Novel approaches to controlling photo-resist CD in double patterning processes", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391U (29 March 2010); https://doi.org/10.1117/12.846468

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