30 March 2010 Process performance of novel resist material and novel coater/developer system for cross-line contact hole process
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Abstract
Double patterning techniques are one of the dominant method to achieve the 32 nm node and beyond and Litho-Litho- Etch (LLE) process is a strong candidate for double patterning method. Contact hole resolution is limited by the low image contrast using dark field masks. Cross-line contact hole process using LLE process is applicable to image fined contact holes. Contact hole patterns are formed by first line and space patterns and orthogonal second line and space patterns. Furthermore LLE process flow should be simple as possible as it can for cost reduction. Thus LLE process without freezing process is ideal one. In this paper, we examine the process performance using latest material for freezing free LLE process, exposure tool and novel coater/developer system. The latest resist materials can form cross-line contact hole with good pattern fidelity and CD uniformity. It will be shown that novel coater/developer hardware is effective on enhancement of lithography performance like CD control and defect control toward double Patterning technology for 193-nm immersion lithography.
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Tsuyoshi Nakamura, Tsuyoshi Nakamura, Jiro Yokoya, Jiro Yokoya, Katsumi Ohmori, Katsumi Ohmori, Hiroshi Nakamura, Hiroshi Nakamura, Takafumi Niwa, Takafumi Niwa, Hideharu Kyouda, Hideharu Kyouda, Junichi Kitano, Junichi Kitano, } "Process performance of novel resist material and novel coater/developer system for cross-line contact hole process", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391W (30 March 2010); doi: 10.1117/12.846342; https://doi.org/10.1117/12.846342
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