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30 March 2010 Development of reverse materials for double patterning process
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Abstract
Materials and processes for double patterning using 193nm immersion lithography has been developing for the 32/22 nm node device generations. As for double patterning , some patterning methods such as LELE (Litho Etch Litho Etch) process and LFLE (Litho Freeze Litho Etch) process have already been reported. LELE process is complicated and is a low throughput process compared to LFLE process. On the other hand, freezing process and freezing material are needed in LFLE process. Contact hole (C/H) and trench pattern resolution are limited by low aerial image contrast. Then, we examined the process and the material that was able to form a minute pattern without increasing the number of processes as much as possible. So image reverse process has one of technique to form the fine hole pattern and trench pattern. The pillar pattern is obtained by the X-Y double line exposures. Then, the reverse material is applied on the pillar pattern and the subsequent process (dry etching or wet etching process) converts the pillar pattern into a hole pattern. In this paper, we studied the reverse process and materials. Methyl isobutyl carbinol (MIBC) was selected as a slovent for the Si contained reverse material. MIBC solvent system has no damege for PR film and pattern. Plannarizaion of reverse material is important for image reverse and pattern transfer.
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Yasushi Sakaida, Hiroaki Yaguchi, Rikimaru Sakamoto, and Bang-Ching Ho "Development of reverse materials for double patterning process", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391Z (30 March 2010); https://doi.org/10.1117/12.846494
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