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30 March 2010 Novel topcoat materials with improved receding angles and dissolution properties for ArF immersion lithography
Sang Geun Yun, Jin Young Lee, Young Soo Yang, Seung Wook Shin, Sung Jae Lee, Hyo Young Kwon, Youn Jin Cho, Seung Jib Choi, Sang Jun Choi, Jong Seob Kim, Tuwon Chang
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Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 763921 (2010) https://doi.org/10.1117/12.848328
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
A topcoat material plays a significant role in achieving technology nodes below 45 nm via ArF immersion lithography. Switching the exposure medium between the lens and the photoresist (PR) film from gas (air, n=1) to liquid (H2O, n=1.44) may lead to leaching of the polymer, the photoacid generator (PAG), or the solvent. These substances can contaminate the lens or cause bubbles, which can lead to defects during the patterning. Previously reported topcoat materials mainly use hydrophobic fluoro-compounds and carboxylic acids to provide high dissolution rates (DR) to basic developers as well as high receding contact angles (RCA). Recently, the demand for a new top-coat material has risen since current materials cause water-mark defects and decreases in scan speeds, due to insufficient RCA's. However, RCA and DR are in a trade-off relationship as an increase in RCA generally results in a lower DR. To overcome this, a novel polymer with high-fluorine content was synthesized to produce a topcoat material with improved DR (120 nm/s in 2.38 wt% TMAH) and RCA (>70°). In addition, a strategy to control the pattern profile according to needs of customers was found.
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Sang Geun Yun, Sang Geun Yun, Jin Young Lee, Jin Young Lee, Young Soo Yang, Young Soo Yang, Seung Wook Shin, Seung Wook Shin, Sung Jae Lee, Sung Jae Lee, Hyo Young Kwon, Hyo Young Kwon, Youn Jin Cho, Youn Jin Cho, Seung Jib Choi, Seung Jib Choi, Sang Jun Choi, Sang Jun Choi, Jong Seob Kim, Jong Seob Kim, Tuwon Chang, Tuwon Chang, "Novel topcoat materials with improved receding angles and dissolution properties for ArF immersion lithography", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763921 (30 March 2010); doi: 10.1117/12.848328; https://doi.org/10.1117/12.848328
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