Noble design of Si-SOH in trilayer resist process for sub-30-nm logic device

Tae-Hwan Oh; Yunsuk Nam; Chansam Chang; Suhyun Kim; Minkeun Kwak; Dongsu Kim; Hongjae Shin; Nae-In Lee; Jongshik Yoon

doi:10.1117/12.846478

30 March 2010 Noble design of Si-SOH in trilayer resist process for sub-30-nm logic device

Tae-Hwan Oh, Yunsuk Nam, Chansam Chang, Suhyun Kim, Minkeun Kwak, Dongsu Kim, Hongjae Shin, Nae-In Lee, Jongshik Yoon

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 763927 (2010) https://doi.org/10.1117/12.846478
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

In hyper NA immersion lithography which has over 1.0 numerical aperture (NA) exposure system, reflectivity control between PR and substrate is key technique to overcome resolution limit. Trilayer resist process, which has two layers of spin-on hard mask (SOH) composed of silicon and carbon, was introduced and applied to various generation of ArF lithography from dry to immersion process. However, lack of adhesion between PR (hydrophobic) and Si-SOH (hydrophilic) can cause pattern collapse problem. Moreover, PR profile was not easily adjusted to optimum shape because some side reaction may be occurred at the interfacial layer between PR and Si-SOH. Herein, we studied how to control interfacial side reaction between PR and Si-SOH layer in Trilayer process. We approached three conceptual items: acidity control to PR, uniformity control of Si-SOH itself, and intermixing control of Si-SOH with PR. First, we checked PR lifting margin with line and space pattern. Although vertical profile was obtained in contact pattern, it was useless if line pattern was collapsed. With first screening tests, we made a conclusion that a major factor for side reaction at interfacial layer was penetration of proton into Si-SOH layer produced exposed region. To solve that problem, intermixing control of Si-SOH with PR was the best solution. We introduced network structure formation with Si-O-Si bond by cross-linking catalyst. AFM and contact angle data showed improved surface morphology. We could obtain improved pattern profiles with several PR samples. This result can be optimized to various generations of ArF immersion lithography and further more.

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Tae-Hwan Oh, Yunsuk Nam, Chansam Chang, Suhyun Kim, Minkeun Kwak, Dongsu Kim, Hongjae Shin, Nae-In Lee, and Jongshik Yoon "Noble design of Si-SOH in trilayer resist process for sub-30-nm logic device", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763927 (30 March 2010); https://doi.org/10.1117/12.846478

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