30 March 2010 Novel molecular glass photoresist materials for next-generation lithography
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Abstract
A series of Adamantanephenol derivatives was synthesized from adamantinetriphenol / adamantinetrimethylhydroquinone and vinylether compound. Solubility for resist solvent or alkali developer of those materials and thermal properties were examined. Adamantanetrimethylhydroquinone cross-linked with divinylether (AmHQ-CL) had excellent properties as positive tone resist material. We evaluated lithographic properties of AmHQ-CL with photo acid generator and base. Line and space pattern was formed with EB exposure followed with post exposure bake and alkali development. Pattern of smooth wall surface was obtained by removing high molecular weight component from AmHQ-CL. Line width roughness (LWR) of the pattern AnHQ-CL nMWD was less than 30 nm. It was very small value compared with that of traditional polymer resist.
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Arimichi Okumura, Arimichi Okumura, Yoshinori Funaki, Yoshinori Funaki, Akira Takaragi, Akira Takaragi, Kazuki Okamoto, Kazuki Okamoto, Kiyoharu Tsutsumi, Kiyoharu Tsutsumi, Keizo Inoue, Keizo Inoue, Ryou Itaya, Ryou Itaya, Kiyoshi Ikura, Kiyoshi Ikura, Yuki Iguchi, Yuki Iguchi, "Novel molecular glass photoresist materials for next-generation lithography", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392E (30 March 2010); doi: 10.1117/12.846501; https://doi.org/10.1117/12.846501
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