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30 March 2010 Extension of 248 nm Monte Carlo, mesoscale models to 193 nm platforms
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Current minimum feature sizes in the microelectronics industry dictate that molecular interactions affect process fidelity and produce stochastic excursions like line edge roughness (LER). The composition of future resists is still unknown at this point, and so simulation of various resist platforms should provide useful information about resist design that minimizes LER. In the past, researchers developed a mesoscale model for exploring representative 248 nm resist systems through dynamic Monte Carlo methods and adaptation of critical ionization theory. This molecular modeling uses fundamental interaction energies combined with a Metropolis algorithm to model the full lithographic process (spin coat, PAB, exposure, PEB, and development). Application of this model to 193 nm platforms allows for comparison between 248 and 193 nm resist systems based on molecular interactions. This paper discusses the fundamental modifications involved in adapting the mesoscale model to a 193 nm platform and investigates how this new model predicts well-understood lithographic phenomena including the relationship between LER and aerial image, the relationship between LER and resist components, and the impact of non-uniform PAG distribution in the resist film. Limited comparisons between the 193 nm system and an analogous 248 nm platform will be discussed.
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Michael Carcasi, Mark Somervell, Steven Scheer, Siddharth Chauhan, Jeffrey Strahan, and C. G. Willson "Extension of 248 nm Monte Carlo, mesoscale models to 193 nm platforms", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392K (30 March 2010);

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