30 March 2010 Theoretical analysis of energy dissipation of electron in the resists II
Author Affiliations +
Abstract
In the electron-beam lithography and extreme-ultraviolet lithography, electrons above ionization energy collide with resist materials and bring out the ionization and electronic excitations of resist molecules. The energy degradation mechanism of the incident primary electrons in resists plays the important role to determine the resist properties. The Monte Carlo simulation using the binary-encounter-collision cross section was performed to determine the electron trajectory in resist materials. The distributions of product species had an edge around 500 eV of incident energy of primary electron. The product distributions of ions and singlets became the narrower in electronic excited states with decrease in incident energy and with increase of the electron generations. Main product of triplets was in the lowest excited state. Triplets had the longer scattering length than singlets and ions.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Toriumi, "Theoretical analysis of energy dissipation of electron in the resists II", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392N (30 March 2010); doi: 10.1117/12.846503; https://doi.org/10.1117/12.846503
PROCEEDINGS
10 PAGES


SHARE
Back to Top