25 March 2010 Simplified double patterning process with non-topcoat self-freezing resist
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Abstract
Double patterning is one of the most promising techniques for sub-30nm half pitch device manufacturing. Several techniques such as dual-trench process (litho-etch-litho-etch: LELE) and dual-line process (litho-litho-etch : LLE) have been reported. Between them, the dual-line process attracts a great deal of attention due to its higher throughput. The key issue in the dual-line process is preventing damage of the first resist pattern during the second lithography process. As a solution, we have developed a process to alleviate this issue using a chemical material called "freezing agent." More recently, we have further simplified the process by developing a simple freezing technique called "self-freezing" or "thermal-freezing." The "self-freezing resist" material can accomplish the freezing process by applying only one bake to the resulting first pattern. In addition, our self-freezing resist also has added water shedding properties to meet non-topcoat (non-TC) immersion resist requirements, which further simplifies the process and materials. In this study, imaging results of Non-TC self-freezing resist including critical dimension uniformity, defectivity and processing properties of the resulting patterns is shown.
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Tomohisa Fujisawa, Tomohisa Fujisawa, Yusuke Anno, Yusuke Anno, Masafumi Hori, Masafumi Hori, Goji Wakamatsu, Goji Wakamatsu, Michihiro Mita, Michihiro Mita, Koji Ito, Koji Ito, Hiromitsu Tanaka, Hiromitsu Tanaka, Kenji Hoshiko, Kenji Hoshiko, Takeo Shioya, Takeo Shioya, Kentaro Goto, Kentaro Goto, Yoshifumi Ogawa, Yoshifumi Ogawa, Hiroaki Takikawa, Hiroaki Takikawa, Yutaka Kozuma, Yutaka Kozuma, Koichi Fujiwara, Koichi Fujiwara, Makoto Sugiura, Makoto Sugiura, Yoshikazu Yamaguchi, Yoshikazu Yamaguchi, Tsutomu Shimokawa, Tsutomu Shimokawa, } "Simplified double patterning process with non-topcoat self-freezing resist", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392Y (25 March 2010); doi: 10.1117/12.846493; https://doi.org/10.1117/12.846493
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