3 March 2010 Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices
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Abstract
The use of high mobility channel materials such as Ge and III/V compounds for CMOS applications is being explored. The introduction of these new materials also opens the path towards the introduction of novel device structures which can be used to lower the supply voltage and reduce the power consumption. The results illustrate the possibilities that are created by the combination of new materials and devices to allow scaling of nanoelectronics beyond the Si roadmap.
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Marc Heyns, Marc Heyns, Florence Bellenger, Florence Bellenger, Guy Brammertz, Guy Brammertz, Matty Caymax, Matty Caymax, Mirco Cantoro, Mirco Cantoro, Stefan De Gendt, Stefan De Gendt, Brice De Jaeger, Brice De Jaeger, Annelies Delabie, Annelies Delabie, Geert Eneman, Geert Eneman, Guido Groeseneken, Guido Groeseneken, Geert Hellings, Geert Hellings, Michel Houssa, Michel Houssa, Francesca Iacopi, Francesca Iacopi, Daniele Leonelli, Daniele Leonelli, Dennis Lin, Dennis Lin, Wim Magnus, Wim Magnus, Koen Martens, Koen Martens, Clement Merckling, Clement Merckling, Marc Meuris, Marc Meuris, Jerome Mitard, Jerome Mitard, Julien Penaud, Julien Penaud, Geoffrey Pourtois, Geoffrey Pourtois, Marc Scarrozza, Marc Scarrozza, Eddy R. Simoen, Eddy R. Simoen, Bart Soree, Bart Soree, Sven Van Elshocht, Sven Van Elshocht, William Vandenberghe, William Vandenberghe, Anne Vandooren, Anne Vandooren, Philippe Vereecke, Philippe Vereecke, Anne Verhulst, Anne Verhulst, Wei-E Wang, Wei-E Wang, } "Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices", Proc. SPIE 7640, Optical Microlithography XXIII, 764003 (3 March 2010); doi: 10.1117/12.852587; https://doi.org/10.1117/12.852587
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