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3 March 2010 Advances in dual-tone development for pitch frequency doubling
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Dual-tone development (DTD) has been previously proposed as a potential cost-effective double patterning technique1. DTD was reported as early as in the late 1990's2. The basic principle of dual-tone imaging involves processing exposed resist latent images in both positive tone (aqueous base) and negative tone (organic solvent) developers. Conceptually, DTD has attractive cost benefits since it enables pitch doubling without the need for multiple etch steps of patterned resist layers. While the concept for DTD technique is simple to understand, there are many challenges that must be overcome and understood in order to make it a manufacturing solution. Previous work by the authors demonstrated feasibility of DTD imaging for 50nm half-pitch features at 0.80NA (k1 = 0.21) and discussed challenges lying ahead for printing sub-40nm half-pitch features with DTD. While previous experimental results suggested that clever processing on the wafer track can be used to enable DTD beyond 50nm halfpitch, it also suggest that identifying suitable resist materials or chemistries is essential for achieving successful imaging results with novel resist processing methods on the wafer track. In this work, we present recent advances in the search for resist materials that work in conjunction with novel resist processing methods on the wafer track to enable DTD. Recent experimental results with new resist chemistries, specifically designed for DTD, are presented in this work. We also present simulation studies that help and support identifying resist properties that could enable DTD imaging, which ultimately lead to producing viable DTD resist materials.
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Carlos Fonseca, Mark Somervell, Steven Scheer, Yuhei Kuwahara, Kathleen Nafus, Roel Gronheid, Shinji Tarutani, and Yuuichiro Enomoto "Advances in dual-tone development for pitch frequency doubling", Proc. SPIE 7640, Optical Microlithography XXIII, 76400E (3 March 2010);

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