Double patterning lithography study with high overlay accuracy

Takahisa Kikuchi; Yosuke Shirata; Masahiko Yasuda; Yasuhiro Iriuchijima; Kengo Takemasa; Ryo Tanaka; Andrew Hazelton; Yuuki Ishii

doi:10.1117/12.846486

10 March 2010 Double patterning lithography study with high overlay accuracy

Takahisa Kikuchi, Yosuke Shirata, Masahiko Yasuda, Yasuhiro Iriuchijima, Kengo Takemasa, Ryo Tanaka, Andrew Hazelton, Yuuki Ishii

Author Affiliations +

Proceedings Volume 7640, Optical Microlithography XXIII; 76400H (2010) https://doi.org/10.1117/12.846486
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Double patterning (DP) has become the most likely candidate to extend immersion lithography to the 32 nm node and beyond. This paper focuses on experimental results of 32nm half pitch patterning using NSR-S620D, the latest Nikon ArF immersion scanner. A litho-freeze-litho (LFL) process was employed for this experiment. Experimental results of line CDU, space CDU, and overlay accuracy are presented. Finally, a budget for pitch splitting DP at the 22 nm half pitch is presented.

Citation Download Citation

Takahisa Kikuchi, Yosuke Shirata, Masahiko Yasuda, Yasuhiro Iriuchijima, Kengo Takemasa, Ryo Tanaka, Andrew Hazelton, and Yuuki Ishii "Double patterning lithography study with high overlay accuracy", Proc. SPIE 7640, Optical Microlithography XXIII, 76400H (10 March 2010); https://doi.org/10.1117/12.846486

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