10 March 2010 Evaluation of lithographic benefits of using ILT techniques for 22nm-node
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As increasing complexity of design and scaling continue to push lithographic imaging to its k1 limit, lithographers have been developing computational lithography solutions to extend 193nm immersion lithography to the 22nm technology node. In our paper, we investigate the beneficial source or mask solutions with respect to pattern fidelity and process variation (PV) band performances for 1D through pitch patterns, SRAM and Random Logic Standard Cells. The performances of two different computational lithography solutions, idealized un-constrained ILT mask and manhattanized mask rule constrain (MRC) compliant mask, are compared. Additionally performance benefits for process-window aware hybrid assist feature (AF) are gauged against traditional rule-based AF. The results of this study will demonstrate the lithographic performance contribution that can be obtained from these mask optimization techniques in addition to what source optimization can achieve.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Zou, Yi Zou, Yunfei Deng, Yunfei Deng, Jongwook Kye, Jongwook Kye, Luigi Capodieci, Luigi Capodieci, Cyrus Tabery, Cyrus Tabery, Thuc Dam, Thuc Dam, Anthony Aadamov, Anthony Aadamov, Ki-Ho Baik, Ki-Ho Baik, Linyong Pang, Linyong Pang, Bob Gleason, Bob Gleason, } "Evaluation of lithographic benefits of using ILT techniques for 22nm-node", Proc. SPIE 7640, Optical Microlithography XXIII, 76400L (10 March 2010); doi: 10.1117/12.848479; https://doi.org/10.1117/12.848479

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