4 March 2010 Overlay characterization and matching of immersion photoclusters
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Proceedings Volume 7640, Optical Microlithography XXIII; 76400W (2010); doi: 10.1117/12.846408
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
Many factors are driving a significant tightening of the overlay budget for advanced technology nodes, e.g. 6nm [mean + 3σ] for 22nm node. Exposure tools will be challenged to support this goal, even with tool dedication. However, tool dedication has adverse impact on cycle time reduction, line productivity and cost issues. There is a strong desire to have tool to tool (and chuck to chuck) matching performance, which supports the tight overlay budgets without tool dedication. In this paper we report improvements in overlay metrology test methods and analysis methods which support the needed exposure tool overlay capability.
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Blandine Minghetti, Timothy Brunner, Christopher Robinson, Christopher Ausschnitt, Dan Corliss, Nelson Felix, "Overlay characterization and matching of immersion photoclusters", Proc. SPIE 7640, Optical Microlithography XXIII, 76400W (4 March 2010); doi: 10.1117/12.846408; https://doi.org/10.1117/12.846408
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KEYWORDS
Overlay metrology

Monochromatic aberrations

Semiconducting wafers

Scanners

Double patterning technology

Reticles

Critical dimension metrology

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