3 March 2010 Lithography and layout co-optimization beyond conventional OPC concept
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Abstract
Instead of conventional SMO that iterates illumination source optimization and OPC, new optimization method is introduced that optimizes illumination source and device layout simultaneously. In this method the layout is described by a function of layout parameters that defines the layout characteristics and the layout parameters are combined with source parameters, which forms a composite space of optimization. In this space the source and layout are optimized simultaneously. This method can search the steepest slope to the solution in the space during optimization, which is impossible for the conventional SMO. So it can reach the real solution with less probability of being trapped in local solution. This technology is applied to some cases of lithography targets such as CD and DOF, and good results are attained with very simple mask. It also works for diagonal patterns that OPC cannot handle easily. In addition more complicated lithography target such as robustness against MSD of scanner stage vibration is addressed and the optimization result is useful to resolve problems caused by fluctuation of manufacturing.
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Koichiro Tsujita, Koji Mikami, Hiroyuki Ishii, Tadashi Arai, Kazuhiro Takahashi, "Lithography and layout co-optimization beyond conventional OPC concept", Proc. SPIE 7640, Optical Microlithography XXIII, 76401A (3 March 2010); doi: 10.1117/12.846264; https://doi.org/10.1117/12.846264
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