12 March 2010 Three-dimensional physical photoresist model calibration and profile-based pattern verification
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Abstract
In this paper, we report large scale three-dimensional photoresist model calibration and validation results for critical layer models that span 32 nm, 28 nm and 22 nm technology nodes. Although methods for calibrating physical photoresist models have been reported previously, we are unaware of any that leverage data sets typically used for building empirical mask shape correction models. . A method to calibrate and verify physical resist models that uses contour model calibration data sets in conjuction with scanning electron microscope profiles and atomic force microscope profiles is discussed. In addition, we explore ways in which three-dimensional physical resist models can be used to complement and extend pattern hot-spot detection in a mask shape validation flow.
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Mohamed Talbi, Mohamed Talbi, Amr Y. Abdo, Amr Y. Abdo, Todd C. Bailey, Todd C. Bailey, Will Conley, Will Conley, Derren N. Dunn, Derren N. Dunn, Masashi Fujimoto, Masashi Fujimoto, John Nickel, John Nickel, No Young Chung, No Young Chung, Sajan Marokkey, Sajan Marokkey, Si Hyeung Lee, Si Hyeung Lee, Chandrasekhar Sarma, Chandrasekhar Sarma, Dongbing Shao, Dongbing Shao, Ramya Viswanathan, Ramya Viswanathan, } "Three-dimensional physical photoresist model calibration and profile-based pattern verification", Proc. SPIE 7640, Optical Microlithography XXIII, 76401D (12 March 2010); doi: 10.1117/12.846466; https://doi.org/10.1117/12.846466
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