13 March 2010 SMO for 28-nm logic device and beyond: impact of source and mask complexity on lithography performance
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Proceedings Volume 7640, Optical Microlithography XXIII; 76401H (2010); doi: 10.1117/12.846473
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
This paper investigates the application of source-mask optimization (SMO) techniques for 28 nm logic device and beyond. We systematically study the impact of source and mask complexity on lithography performance. For the source, we compare SMO results for the new programmable illuminator (ASML's FlexRay) and standard diffractive optical elements (DOEs). For the mask, we compare different mask-complexity SMO results by enforcing the sub-resolution assist feature (SRAF or scattering bar) configuration to be either rectangular or freeform style while varying the mask manufacturing rule check (MRC) criteria. As a lithography performance metric, we evaluate the process windows and MEEF with different source and mask complexity through different k1 values. Mask manufacturability and mask writing time are also examined. With the results, the cost effective approaches for logic device production are shown, based on the balance between lithography performance and source/mask (OPC/SRAF) complexity.
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Seiji Nagahara, Kazuyuki Yoshimochi, Hiroshi Yamazaki, Kazuhiro Takeda, Takayuki Uchiyama, Stephen Hsu, Zhipan Li, Hua-yu Liu, Keith Gronlund, Terunobu Kurosawa, Jun Ye, Luoqi Chen, Hong Chen, Zheng Li, Xiaofeng Liu, Wei Liu, "SMO for 28-nm logic device and beyond: impact of source and mask complexity on lithography performance", Proc. SPIE 7640, Optical Microlithography XXIII, 76401H (13 March 2010); doi: 10.1117/12.846473; http://dx.doi.org/10.1117/12.846473
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KEYWORDS
SRAF

Source mask optimization

Photomasks

Metals

Diffractive optical elements

Lithography

Manufacturing

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