3 March 2010 Self-aligned double patterning process for 32/32nm contact/space and beyond using 193 immersion lithography
Author Affiliations +
State of the art production single print lithography for contact is limited to ~43-44nm half-pitch given the parameters in the classic photolithography resolution formula for contacts in 193 immersion tool (k1 ≥ 0.3, NA = 1.35, and λ = 193nm). Single print lithography limitations can be overcome by (1) Process / Integration based techniques such as double-printing (DP), and spacer based self-aligned double patterning (SADP), (2) Non-standard printing techniques such as electron-beam (eBeam), extreme ultraviolet lithography (EUVL), nano-imprint Lithography (NIL). EUV tools are under development, while nanoimprint is a developmental tool only. Spacer based SADP for equal line/space is well documented as successful patterning technique for 3xnm and beyond. In this paper, we present an adaptation of selfaligned double patterning process to 2-D regular 32/32nm contact/space array. Using SADP process, we successfully achieved an equal contact/space of 32/32nm using 193 immersion lithography that is only capable of 43-44nm resolvable half-pitch contact printing. The key and unique innovation of this work is the use of a 2-D (x and y axis) pillar structure to achieve equal contact/space. Final result is a dense contact array of 32nm half-pitch in 2-D structure (x and y axis). This is achieved on simplified stack of Substrate / APF / Nitride. Further transfer of this new contact pattern from nitride to the substrate (e.g., Oxide, APF, Poly, Si...) is possible. The technique is potentially extendible to 22/22nm contact/space and beyond.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bencherki Mebarki, Bencherki Mebarki, Liyan Miao, Liyan Miao, Yongmei Chen, Yongmei Chen, James Yu, James Yu, Pokhui Blanco, Pokhui Blanco, James Makeeff, James Makeeff, Jen Shu, Jen Shu, Christopher Bencher, Christopher Bencher, Mehul Naik, Mehul Naik, Christopher Sui Wing Ngai, Christopher Sui Wing Ngai, } "Self-aligned double patterning process for 32/32nm contact/space and beyond using 193 immersion lithography", Proc. SPIE 7640, Optical Microlithography XXIII, 764023 (3 March 2010); doi: 10.1117/12.862583; https://doi.org/10.1117/12.862583

Back to Top