4 March 2010 Laser bandwidth effect on overlay budget and imaging for the 45 nm and 32nm technology nodes with immersion lithography
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Proceedings Volume 7640, Optical Microlithography XXIII; 76402B (2010); doi: 10.1117/12.846552
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
The laser bandwidth and the wavelength stability are among the important factors contributing to the CD Uniformity budget for a 45 nm and 32nm technology node NV Memory. Longitudinal chromatic aberrations are also minimized by lens designers to reduce the contrast loss among different patterns. In this work, the residual effect of laser bandwidth and wavelength stability are investigated and quantified for a critical DOF layer. Besides the typical CD implications we evaluate the "image placement error" (IPE) affecting specific asymmetric patterns in the device layout. We show that the IPE of asymmetric device patterns can be sensitive to laser bandwidth, potentially resulting in nanometer-level errors in overlay. These effects are compared to the relative impact of other parameters that define the contrast of the lithography image for the 45nm node. We extend the discussion of the contributions to IPE and their relative importance in the 32 nm double-patterning overlay budget.
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Umberto Iessi, Michiel Kupers, Elio De Chiara, Pierluigi Rigolli, Ivan Lalovic, G. Capetti, "Laser bandwidth effect on overlay budget and imaging for the 45 nm and 32nm technology nodes with immersion lithography", Proc. SPIE 7640, Optical Microlithography XXIII, 76402B (4 March 2010); doi: 10.1117/12.846552; https://doi.org/10.1117/12.846552
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KEYWORDS
Laser stabilization

Optical simulations

Overlay metrology

Chromatic aberrations

Distortion

Laser applications

Lithography

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