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3 March 2010 A new etch-aware after development inspection (ADI) technique for OPC modeling
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This paper presents a new etch-aware after development inspection (ADI) model with an inverse etch bias filter. We model the etch bias as a function of pattern geometry parameters, and we introduce it to the ADI model by means of an inverse bias matrix that works in conjunction with an ADI specification related matrix. The inverse bias filter tunes the ADI model to be highly correlated to the etch effects and provides simplified and designable inputs to the after etch inspection (AEI) model and hence improves its performance over the staged modeling flow. In addition, the inverse bias filter creates a model based rule table for design retargeting. Some of the etch effects are corrected by the inverse bias filter as the lithography model is calibrated, thus speeding up and simplifying the etch AEI model, while maintaining lithography ADI model with a good accuracy.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing Xue, Jason Huang, Aram Kazarian, and Brad Falch "A new etch-aware after development inspection (ADI) technique for OPC modeling", Proc. SPIE 7640, Optical Microlithography XXIII, 76402Q (3 March 2010);


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