Automatic numerical determination of lateral influence functions for fast-CAD

Marshal A. Miller; Kenji Yamazoe; Andrew R. Neureuther

doi:10.1117/12.846630

10 March 2010 Automatic numerical determination of lateral influence functions for fast-CAD

Marshal A. Miller, Kenji Yamazoe, Andrew R. Neureuther

Proceedings Volume 7640, Optical Microlithography XXIII; 764031 (2010) https://doi.org/10.1117/12.846630
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

This paper presents kernel convolution with pattern matching (KCPM), which is an updated version of fast-CAD pattern matching for assessing lithography process variations. With KCPM, kernels that capture lateral feature interaction between features due to process variations are convolved with a mask layout to calculate a match factor, which indicates approximate change in intensity at the target location. The algorithm incorporates a custom source, a mask with electromagnetic effects, and an arbitrary pupil function. For further accuracy improvement, we introduce a source splitting technique. Though the evaluation speed is decreased, R² correlation of the match factor and change in intensity is increased. Results are shown with R² correlation as high as 0.99 for nearly coherent and annular illumination. Additionally, with a numerical aperture of 1.35, unbalanced quadrapole illumination, 10mλ RMS random aberration in projection optics and complex mask with EMF effects included, R² correlation of more than 0.87 is achieved. This process is extremely fast (40μs per location) making it valuable for a wide range of applications, most commonly hot spot detection and optimization.

Citation Download Citation

Marshal A. Miller, Kenji Yamazoe, and Andrew R. Neureuther "Automatic numerical determination of lateral influence functions for fast-CAD", Proc. SPIE 7640, Optical Microlithography XXIII, 764031 (10 March 2010); https://doi.org/10.1117/12.846630

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