3 March 2010 Methods for assessing empirical model parameters and calibration pattern measurements
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Abstract
Assessing an empirical model for ILT or OPC on a full-chip scale is a non-trivial task because the model's fit to calibration input data must be balanced against its robust prediction on wafer prints. When a model does not fit the calibration measurements well, we face the difficult choice between readjusting model parameters and re-measuring wafer CDs of calibration patterns. On the other hand, when a model does fit very well, we will still likely have the nagging suspicion that an overfitting might have occurred. Here we define a few objective and quantitative methods for model assessment. Both theoretical foundation and practical use are presented.
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Xin Zhou, Xin Zhou, Eldar Khaliullin, Eldar Khaliullin, Lan Luan, Lan Luan, } "Methods for assessing empirical model parameters and calibration pattern measurements", Proc. SPIE 7640, Optical Microlithography XXIII, 764038 (3 March 2010); doi: 10.1117/12.847734; https://doi.org/10.1117/12.847734
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