4 March 2010 Immersion BARC for hyper NA applications II
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Proceedings Volume 7640, Optical Microlithography XXIII; 76403F (2010); doi: 10.1117/12.848454
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States
Abstract
Reflectivity control through angle is challenging at hyper NA, especially for Logic devices which have various pitches in the same layer. A multilayer antireflectant system is required to control complex reflectivity resulting from various incident angles. In our previous works, we showed the successful optimization of multilayer antireflectant systems at hyper NA for BEOL layers. In this paper, we show the optimization of new multilayer bottom anti-reflectant systems to meet new process requirements at 28nm node Logic device. During the manufacturing process, rework process is necessary when critical dimension or overlay doesn't meet the specifications. Some substrates are sensitive to the rework process. As a result, litho performance including the line width roughness (LWR) could change. The optimizations have been done on various stack options to improve LWR. An immersion tool at 1.35NA was used to perform lithography tests. Simulation was performed using ProlithTM software.
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Yu-Chin Huang, Kai-Lin Chuang, Tsung-Ju Yeh, Steven Wu, Bill Lin, Wen-Liang Huang, Bo-Jou Lu, E. T. Liu, Chun Chi Yu, Chaoyang Lin, Jeong Yun Yu, Greg Prokopowicz, Sue Ryeon Kim, Sabrina Wong, George Barclay, "Immersion BARC for hyper NA applications II", Proc. SPIE 7640, Optical Microlithography XXIII, 76403F (4 March 2010); doi: 10.1117/12.848454; https://doi.org/10.1117/12.848454
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KEYWORDS
Reflectivity

Metals

Line width roughness

Etching

Logic devices

Multilayers

Lithography

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