Examining reflectivity criterion for various ArF lithography

Meng-Feng Tsai; Chia-Chi Lin; Wei-Chun Chao; Chan-Tsun Wu; Jun-Cheng Lai

doi:10.1117/12.848324

3 March 2010 Examining reflectivity criterion for various ArF lithography

Meng-Feng Tsai, Chia-Chi Lin, Wei-Chun Chao, Chan-Tsun Wu, Jun-Cheng Lai

Proceedings Volume 7640, Optical Microlithography XXIII; 76403H (2010) https://doi.org/10.1117/12.848324
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

When the feature size keep shrinking to 4Xnm, ArF lithography has already proceed to immersion process and became mature enough. There is an important factor that will obviously influence photo process window in the initial phase development is the optical reflection from imperfect substrate design. From previous experience, reflection would be optimized to fine level by adjusting TARC (Top Anti-Reflection Coating) or BARC (Bottom Anti-Reflection Coating) thickness through index of reflectivity. However, actual criteria of reflectivity for various ArF lithography process are unlikely the same, e.g. different system type (wet/dry), node (feature size), illumination type, or even substrate effect, and also need to be examined to retain a decent process window. In this paper, experimental result of various abovementioned ArF process have been compared with reflectivity index from prolith simulation engine, and distinctly clarified criteria of reflectivity for each case. Furthermore, effects of reflection to several optics caused patterning-related results, e.g. IDB (Iso-Dense Bias), OPC (Optical Proximate Correction) accuracy, will also be discussed. The result also shows severe criterion of reflection is requested as feature size getting smaller to 4Xnm node, and RET-applied (Resolution Enhancement Technology) process has opposite result on it. From experimental results, IDB has been obviously affected by reflection and become one important factor that influences reflection criterion examination.

Citation Download Citation

Meng-Feng Tsai, Chia-Chi Lin, Wei-Chun Chao, Chan-Tsun Wu, and Jun-Cheng Lai "Examining reflectivity criterion for various ArF lithography", Proc. SPIE 7640, Optical Microlithography XXIII, 76403H (3 March 2010); https://doi.org/10.1117/12.848324

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KEYWORDS

Reflectivity

Reflection

Lithography

Resolution enhancement technologies

Optical proximity correction

Bottom antireflective coatings

Carbon

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